Solar cell and method of manufacturing the same

ABSTRACT

An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of InternationalApplication No. PCT/JP2011/051479, filed on Jan. 26, 2011, entitled“SOLAR CELL AND METHOD FOR PRODUCING SAME,” which claims priority basedon Article 4 of Patent Cooperation Treaty from prior Japanese PatentApplications No. 2010-014597, filed on Jan. 26, 2010, the entirecontents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to a back junction solar cell in which an n-typesemiconductor layer and a p-type semiconductor layer are formed on arear surface of a semiconductor substrate.

2. Description of Related Art

Solar cells directly convert sunlight energy, which is clean andunlimitedly supplied, into electric energy, and, thus, are expected as anew energy source.

Conventionally, a solar cell in which an n-type semiconductor layer anda p-type semiconductor layer are formed on a rear surface of asemiconductor substrate has been known, which is so-called a backjunction solar cell (e.g., Patent Document 1). The back junction solarcell receives light through a light-receiving surface to generatecarriers.

FIG. 1A is a cross-sectional view of a conventional back junction solarcell 100. As shown in FIG. 1(a), solar cell 100 includes n-typesemiconductor layer 120 and p-type semiconductor layer 130, which areamorphous semiconductor layers, formed on rear surface 112 ofsemiconductor substrate 110. N-type semiconductor layer 120 and p-typesemiconductor layer 130 are alternately arranged.

Patent Document 1: Published Japanese Translation of PCT InternationalApplication No. 2009-524916

SUMMARY OF THE INVENTION

In a back junction solar cell, carriers are taken only from a rearsurface. Accordingly, a current density in the back junction solar cellbecomes larger than that in a solar cell in which carriers are takenfrom a light-receiving surface and rear surface of a semiconductorsubstrate.

An aspect of the invention provides a solar cell that comprises asemiconductor substrate having a light-receiving surface and a rearsurface; a first semiconductor layer having a first conductivity type; asecond semiconductor layer having a second conductivity type, the firstsemiconductor layer and the second semiconductor layer being formed onthe rear surface, and a trench formed in the rear surface, wherein thefirst semiconductor layer is formed on the rear surface in which thetrench is not formed, and the second semiconductor layer is formed on aside surface of the trench in an arrangement direction in which thefirst semiconductor layer and the second semiconductor layer arealternately arranged and on a bottom surface of the trench.

In addition, a solar cell according to the invention includes: asemiconductor substrate; a first semiconductor layer formed on thesemiconductor substrate; an insulation layer formed on the firstsemiconductor layer and formed to include an aperture exposing the firstsemiconductor layer; a second semiconductor layer arranged alternatelywith the first semiconductor layer on the semiconductor substrate andformed to cover the insulation layer; an underlying electrode formed onthe first semiconductor layer and the second semiconductor layer andformed to include an isolation trench on the insulation layer, theisolation trench electrically isolating the first semiconductor layerand the second semiconductor layer from each other; and a collectionelectrode formed on the underlying electrode.

In addition, a method of manufacturing a solar cell according to theinvention, includes the steps of: preparing a semiconductor substrate inwhich a first semiconductor layer and a second semiconductor layerarranged alternately with the first semiconductor layer are formed;forming an underlying electrode such that the underlying electrodecovers the first semiconductor layer and the second semiconductor layer;forming an isolation trench separating the underlying electrode into afirst portion connected to the first semiconductor layer and a secondportion connected to the second semiconductor layer; and forming acollection electrode on each of the first portion and second portion ofthe underlying electrode by using a plating method.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a cross-sectional view of conventional back junction solarcell 100. FIG. 1B is a graph showing a current density in solar cell100.

FIG. 2 is a plan view seen from rear surface 12 side of solar cell 1Aaccording to an embodiment.

FIG. 3 is a cross-sectional view taken along the A-A′ line in FIG. 2.

FIG. 4 is a cross sectional view taken along vertical direction zvertical to arrangement direction x and longitudinal direction y andarrangement direction x of solar cell 1B according to the embodiment.

FIG. 5 is a cross-sectional view taken along vertical direction zvertical to arrangement direction x and longitudinal direction y andarrangement direction x of solar cell 1C according to the embodiment.

FIG. 6 is a flowchart for illustrating a method of manufacturing solarcell 1A according to the embodiment.

FIG. 7 is a drawing for illustrating the method of manufacturing solarcell 1A according to the embodiment.

FIG. 8 is a drawing for illustrating the method of manufacturing solarcell 1A according to the embodiment.

FIG. 9 is a drawing for illustrating the method of manufacturing solarcell 1A according to the embodiment.

FIG. 10 is a drawing for illustrating the method of manufacturing solarcell 1A according to the embodiment.

FIG. 11 is a drawing for illustrating the method of manufacturing solarcell 1A according to the embodiment.

FIG. 12 is a drawing for illustrating the method of manufacturing solarcell 1A according to the embodiment.

FIG. 13 is a drawing for illustrating the method of manufacturing solarcell 1A according to the embodiment.

FIG. 14A is a cross-sectional view taken along vertical direction zvertical to arrangement direction x and longitudinal direction y andarrangement direction x of a solar cell according to an example in acomputational model. FIG. 14B is a cross-sectional view taken alongvertical direction z vertical to arrangement direction x andlongitudinal direction y and arrangement direction x of a solar cellaccording to a comparative example in the computational model.

FIG. 15 is a graph showing a relationship between a relative currentdensity and a distance from origin 0.

DETAILED DESCRIPTION OF EMBODIMENTS

First of all, in order to determine a magnitude of a current density ofconventional back junction solar cell 100 shown in FIG. 1A, a currentdensity is calculated by using a device simulator. Specifically, currentdensities of n-type semiconductor layer 120 and p-type semiconductorlayer 130 and a current density of a region r from rear surface 112 ofsemiconductor substrate 110 to a depth of 0.05 μm in solar cell 100 aremeasured. It is assumed that the vertical axis is a current density andthe horizontal axis is a length along arrangement direction x in whichn-type semiconductor layer 120 and p-type semiconductor layer 130 arealternately arranged. As shown in FIG. 1A, an end portion of p-typesemiconductor layer 130 is set to be positioned at 500 nm in arrangementdirection x. An end portion of n-type semiconductor layer 120, the endportion adjacent to the end portion of p-type semiconductor layer 130,is set to be positioned at 550 nm in arrangement direction x. FIG. 1Bshows the result.

As shown in FIG. 1B, it can be seen that the current density becomeslarger in end region 120 a of n-type semiconductor layer 120 and endregion 130 a of p-type semiconductor layer 130. Holes being carriersmove to p-type semiconductor layer 130. The holes generated near n-typesemiconductor layer 120 are concentrated to the end portion of p-typesemiconductor layer 130 on rear surface 112. This likely causes thecurrent density to be larger.

The temperature at the end portion of the semiconductor layer with ahigher current density increases along with generated electricity ascompared with other portions. This temperature increase results indeterioration in the semiconductor layer and time-related deteriorationsuch that an end portion of the semiconductor layer comes off from asemiconductor substrate.

Subsequently, one example of solar cell 1 according to an embodiment isdescribed by referring to the drawings. In the following description ofthe drawings, same or similar reference numerals are given to denotesame or similar portions. Note that the drawings are merelyschematically shown and proportions of sizes and the like are differentfrom actual ones. Thus, specific sizes and the like should be judged byreferring to the description below. In addition, there are of courseincluded portions where relationships or percentages of sizes of thedrawings are different with respect to one another.

(1) Schematic Configuration of Solar Cell 1A

A schematic configuration of solar cell 1A according to an embodiment isdescribed by referring to FIGS. 2 and 3. FIG. 2 is a plan view seen fromrear surface 12 side of solar cell 1A according to an embodiment. FIG. 3is a cross-sectional view seen from the A-A′ line in FIG. 2.

As shown in FIGS. 2 and 3, solar cell 1A includes semiconductorsubstrate 10 n, first semiconductor layer 20 n, second semiconductorlayer 30 p, insulation layer 40, first electrode 50 n, second electrode50 p, connection electrode 60 n, and connection electrode 60 p.

Semiconductor substrate 10 n has light-receiving surface 11 receivinglight and rear surface 12 provided on the opposite side fromlight-receiving surface 11. Semiconductor substrate 10 n generatescarriers by receiving light on light-receiving surface 11. The carriersmean holes and electrons which are generated by absorption of light intosemiconductor substrate 10 n.

As shown in FIG. 3, trench 13 is formed in rear surface 12 ofsemiconductor substrate 10 n. Trench 13 has side surface 17 and bottomsurface 19. In solar cell 1A, side surface 17 and bottom surface 19 arecontinuous to form an arc shape.

Semiconductor substrate 10 n is a wafer shaped substrate capable ofbeing made of a general semiconductor material including a crystallinesemiconductor material such as a single crystal Si or polycrystalline Sihaving an n-type or p-type conductivity type or a compound semiconductormaterial such as GaAs or InP. Fine uneven portions may be formed onlight-receiving surface 11 and rear surface 12 of semiconductorsubstrate 10 n. Although not illustrated in the drawings, a structure(e.g., an electrode) blocking light from entering is not formed onlight-receiving surface 11 of semiconductor substrate 10 n. For thisreason, semiconductor substrate 10 n can receive light on entirelight-receiving surface 11. Light-receiving surface 11 may be coveredwith a passivation layer. The passivation layer has a passivationproperty to inhibit re-coupling of the carriers. The passivation layeris a substantially intrinsic amorphous semiconductor layer which isformed in such a manner that, for example, a dopant is not added or aminute amount of dopant is added. In addition to this, an oxide film ora nitride film may be used. The description is made on assumption thatsemiconductor substrate 10 n is an n-type single crystal siliconsubstrate in solar cell 1A. Accordingly, a conductivity type ofsemiconductor substrate 10 n is an n-type. Thus, minority carriers areholes.

As shown in FIG. 3, first semiconductor layer 20 n is formed on rearsurface 12 of semiconductor substrate 10 n. Specifically, firstsemiconductor layer 20 n is formed on rear surface 12 in which trench 13is not formed. Also, first semiconductor layer 20 n is formed to have alongitudinal direction. This longitudinal direction is set aslongitudinal direction y. First semiconductor layer 20 n has a firstconductivity type. In solar cell 1A, first semiconductor layer 20 n hasan n-type conductivity type.

As shown in FIG. 3, first semiconductor layer 20 n includes i-typeamorphous semiconductor layer 22 i and n-type amorphous semiconductorlayer 25 n. I-type amorphous semiconductor layer 22 i is formed on rearsurface 12 of semiconductor substrate 10 n. N-type amorphoussemiconductor layer 25 n is formed on i-type amorphous semiconductorlayer 22 i. With such configuration of n-type semiconductor substrate 10n, i-type amorphous semiconductor layer 22 i, and n-type amorphoussemiconductor layer 25 n (so-called, BSF structure), the re-coupling ofthe minority carriers on the rear surface of semiconductor substrate 10n can be inhibited.

As shown in FIG. 3, second semiconductor layer 30 p is formed on rearsurface 12 of semiconductor substrate 10 n. Specifically, secondsemiconductor layer 30 p is formed on side surface 17 of trench 13 andbottom surface 19 of trench 13 in arrangement direction x. In solar cell1A, second semiconductor layer 30 p is also formed on insulation layer40. Second semiconductor layer 30 p is formed to cover the end portionof first semiconductor layer 20 n. Also, second semiconductor layer 30 pis formed along longitudinal direction y. Second semiconductor layer 30p has a second conductivity type. In solar cell 1A, second semiconductorlayer 30 p has a p-type conductivity type. Accordingly, semiconductorsubstrate 10 n and second semiconductor layer 30 p form a p-n junction.

As shown in FIG. 3, second semiconductor layer 30 p includes i-typeamorphous semiconductor layer 32 i and p-type amorphous semiconductorlayer 35 p. I-type amorphous semiconductor layer 32 i is formed on rearsurface 12 of semiconductor substrate 10 n. Accordingly, the junctionbetween second semiconductor layer 30 p and side surface 17 and thejunction between second semiconductor layer 30 p and bottom surface 19are hetero-junctions. P-type amorphous semiconductor layer 35 p isformed on i-type amorphous semiconductor layer 32 i. With theconfiguration of n-type semiconductor substrate 10 n, i-type amorphoussemiconductor layer 32 i, and p-type amorphous semiconductor layer 35 p,the property of the p-n junction can be improved.

As shown in FIG. 3, first semiconductor layer 20 n and secondsemiconductor layer 30 p are alternately arranged along arrangementdirection x. In solar cell 1A, width L2 of second semiconductor layer 30p formed on rear surface 12 in arrangement direction x is preferablylonger than width L1 of first semiconductor layer 20 n formed on rearsurface 12 in arrangement direction x. With this, a series resistancecan be lowered and thus a fill factor of the solar cell can be furtherreduced. Note that arrangement direction x and longitudinal direction yare perpendicular to each other.

First semiconductor layer 20 n and second semiconductor layer 30 p arein contact with each other on rear surface 12. Specifically, firstsemiconductor layer 20 n and second semiconductor layer 30 p are incontact with each other on a boundary between rear surface 12 in whichtrench 13 is not formed and trench 13. With this, a junction areabetween the semiconductor substrate and the semiconductor layer can bemaximized, so that the rear surface of semiconductor substrate 10 n canbe effectively passivated. As a result, effectiveness of generatingelectricity can be improved.

Each of i-type amorphous semiconductor layer 22 i, i-type amorphoussemiconductor layer 32 i, n-type amorphous semiconductor layer 25 n, andp-type amorphous semiconductor layer 35 p can include an amorphoussemiconductor containing hydrogen and silicon. An example of suchamorphous semiconductor includes an amorphous silicon, amorphous siliconcarbide, or amorphous silicon germanium. In addition to this, otheramorphous semiconductors may be used. Each of i-type amorphoussemiconductor layer 22 i, i-type amorphous semiconductor layer 32 i,n-type amorphous semiconductor layer 25 n, and p-type amorphoussemiconductor layer 35 p may include one kind of amorphoussemiconductor. Each of i-type amorphous semiconductor layer 22 i, i-typeamorphous semiconductor layer 32 i, n-type amorphous semiconductor layer25 n, and p-type amorphous semiconductor layer 35 p may include acombination of two or more kinds of amorphous semiconductors.

Insulation layer 40 has an insulation property. Insulation layer 40 isformed on first semiconductor layer 20 n. As insulation layer 40,aluminum nitride, silicon nitride, or silicon oxide may be used.

First electrode 50 n is electrically connected to first semiconductorlayer 20 n. As shown in FIG. 2, first electrode 50 n is formed alonglongitudinal direction y. First electrode 50 n preferably includestransparent electrode layer 52 n and collection electrode 55 n.Transparent electrode layer 52 n is formed on first semiconductor layer20 n. Specifically, transparent electrode layer 52 n is formed in astate of being held between insulation layers 40 in arrangementdirection x. Also, transparent electrode layer 52 n is formed on secondsemiconductor layer 30 p formed on insulation layer 40. Transparentelectrode layer 52 n is formed of a conductive material havingtranslucency. As transparent electrode layer 52 n, indium oxide tin, tinoxide, or zinc oxide may be used. Collection electrode 55 n is formed ontransparent electrode layer 52 n. Collection electrode 55 n may beformed using a resin-type conductive paste having a resin material asbinder and conductive particles such as silver particles as fillers orusing silver for the sputtering method. Besides, silver, nickel, copperor the like may be formed as an underlying metal by using a sputteringmethod, and thereafter copper or the like may be formed by the platingmethod.

Second electrode 50 p is electrically connected to second semiconductorlayer 30 p. As shown in FIG. 2, second electrode 50 p is formed alonglongitudinal direction y. Second electrode 50 p preferably includestransparent electrode layer 52 p and collection electrode 55 p.Transparent electrode layer 52 p is formed on second semiconductor layer30 p. Collection electrode 55 p is formed on transparent electrode layer52 p. Transparent electrode layer 52 p and collection electrode 55 p mayrespectively use materials same as those of transparent electrode layer52 n and collection electrode 55 n.

First electrode 50 n and second electrode 50 p collect carriersgenerated by receiving light. First electrode 50 n and second electrode50 p are isolated by isolation trench 70 from each other in order toprevent a short circuit. Isolation trench 70 is provided in transparentelectrode 52. Isolation trench 70 is provided in transparent electrode52 formed on second semiconductor layer 30 p formed on insulation layer40. Accordingly, the bottom of isolation trench 70 is secondsemiconductor layer 30 p. Second semiconductor layer 30 p protectsinsulation layer 40 at the bottom of isolation trench 70. With this,second semiconductor layer 30 p protects the junction between firstsemiconductor layer 20 n and second semiconductor substrate 10 n.Isolation trench 70 is formed along longitudinal direction y. Note thatsecond semiconductor layer 30 p has a p-type, which means that it has alow conductivity. For this reason, a leak between first electrode 50 nand second electrode 50 p via second semiconductor layer 30 p isextremely small.

Connection electrode 60 n is electrically connected to first electrodes50 n. Connection electrode 60 p is electrically connected to secondelectrodes 50 p. Connection electrode 60 n and connection electrode 60 pfurther collect photosynthesized carriers collected by first electrodes50 n and second electrodes 50 p.

(2) Schematic Configuration of Solar Cell 1B

A schematic configuration of solar cell 1B according to the embodimentis described by referring to FIG. 4. The description duplicated withthat of solar cell 1A is omitted below. In other words, portionsdifferent from those of solar cell 1A are mainly described. FIG. 4 is across-sectional view taken along vertical direction z vertical toarrangement direction x and longitudinal direction y and arrangementdirection x of solar cell 1B according to the embodiment.

As shown in FIG. 4, first semiconductor layer 20 p is formed on rearsurface 12 of semiconductor substrate 10 n. Specifically, firstsemiconductor layer 20 p is formed on rear surface 12 in which trench 13is not formed. Also, first semiconductor layer 20 p is formed alonglongitudinal direction y. In solar cell 1B, first semiconductor layer 20p has a p-type conductivity type. Accordingly, the conductivity type ofsemiconductor substrate 10 n is different from that of firstsemiconductor layer 20 p. Accordingly, semiconductor substrate 10 n andfirst semiconductor layer 20 p form a p-n junction.

As shown in FIG. 4, first semiconductor layer 20 p includes i-typeamorphous semiconductor layer 22 i and p-type amorphous semiconductorlayer 25 p. I-type amorphous semiconductor layer 22 i is formed on rearsurface 12 of semiconductor substrate 10 n. The p-type amorphoussemiconductor layer 25 p is formed on i-type amorphous semiconductorlayer 22 i.

As shown in FIG. 4, second semiconductor layer 30 n is formed on rearsurface 12 of semiconductor substrate 10 n. Specifically, secondsemiconductor layer 30 n is formed on side surface 17 of trench 13 andbottom surface 19 of trench 13 in arrangement direction x. In solar cell1B, second semiconductor layer 30 n is also formed on insulation layer40. Second semiconductor layer 30 n is formed to cover an end portion ofsemiconductor layer 20 p. Also, second semiconductor layer 30 n isformed along longitudinal direction y. In solar cell 1B, secondsemiconductor layer 30 n has an n-type conductivity type. Accordingly,the conductivity type of semiconductor substrate 10 n is same as that ofsecond semiconductor layer 30 n.

As shown in FIG. 4, second semiconductor layer 30 n includes i-typeamorphous semiconductor layer 32 i and n-type amorphous semiconductorlayer 35 n. I-type amorphous semiconductor layer 32 i is formed on rearsurface 12 of semiconductor substrate 10 n. The n-type amorphoussemiconductor layer 35 n is formed on i-type amorphous semiconductorlayer 32 i.

As shown in FIG. 4, in solar cell 1B, width L1 of first semiconductorlayer 20 p formed on rear surface 12 in arrangement direction x islonger than width L2 of second semiconductor layer 30 n formed on rearsurface 12 in arrangement direction x. In other words, width L2 isshorter than width L1.

(3) Schematic Configuration of Solar Cell 1C

A schematic configuration of solar cell 1C is described by referring toFIG. 5. The description duplicated with that of solar cell 1A is omittedbelow. In other words, portions different from those of solar cell 1Aare mainly described. FIG. 5 is a cross-sectional view taken alongvertical direction z vertical to arrangement direction x andlongitudinal direction y and arrangement direction x of solar cell 1Caccording to the embodiment.

As shown in FIG. 5, trench 13 a and trench 13 b are formed in rearsurface 12 of semiconductor substrate 10 n. Trench 13 a has side surface17 and bottom surface 19. Side surface 17 is included to be continuouswith bottom surface 19. In solar cell 1C, side surface 17 and bottomsurface 19 are continuous to form an angle therebetween. However, sidesurface 17 and bottom surface 19 may be continuous to form an arc shape.

Trench 13 b has side surface 17 and bottom surface 19. Side surface 17includes side surface 17 a and side surface 17 b. Side surface 17 a andside surface 17 b are continuous to form an angle therebetween. However,side surface 17 a and side surface 17 b may be continuous to form an arcshape. Side surface 17 b and bottom surface 19 are continuous to form anangle therebetween. However, side surface 17 b and bottom surface 19 maybe continuous to from an arc shape.

In solar cell 1C, trench 13 a and trench 13 b are formed in rear surface12. However, only trench 13 a may be formed in rear surface 12. Or, onlytrench 13 b may be formed in rear surface 12.

(4) Method of Manufacturing Solar Cell 1A

A method of manufacturing solar cell 1A according to the embodiment isdescribed by referring to FIGS. 6 to 13. FIG. 6 is a flowchart forillustrating a method of manufacturing solar cell 1A, according to theembodiment. FIGS. 7 to 13 are views, each for illustrating a method ofmanufacturing solar cell 1A according to the embodiment.

As shown in FIG. 6, the method of manufacturing solar cell 1A includessteps S1 to S5.

Step S1 is a step of forming first semiconductor layer 20 n having afirst conductivity type on rear surface 12 of semiconductor substrate 10n. Firstly, semiconductor substrate 10 n is prepared. To removeparticles on the surface of semiconductor substrate 10 n, semiconductorsubstrate 10 n was subjected to etching with an acid or alkali solution.On rear surface 12 of prepared semiconductor substrate 10 n, i-typeamorphous semiconductor layer 22 i is formed. On formed i-type amorphoussemiconductor layer 22 i, n-type amorphous semiconductor layer 25 n isformed. I-type amorphous semiconductor layer 22 i and n-type amorphoussemiconductor layer 25 n are formed by, for example, a chemical vapordeposition method (CVD method). With this step S1, first semiconductorlayer 20 n is formed on rear surface 12.

Step S2 is a step of forming insulation layer 40 having an insulationproperty. With step S2, insulation layer 40 is formed on formed firstsemiconductor layer 20 n. Specifically, as shown in FIG. 7, insulationlayer 40 is formed on n-type amorphous semiconductor layer 25 n.Insulation layer 40 is formed by, for example, the CVD method.

Step S3 is a step of forming trench 13 in rear surface of semiconductorsubstrate 10 n. Step S3 includes steps S31 and S32.

Step S31 is a step of removing insulation layer 40 formed on firstsemiconductor layer 20 n. An etching paste is applied onto insulationlayer 40 by using the screen printing method. Seeing rear surface 12from vertical direction z, the etching paste is applied onto anappropriate portion of insulation layer 40 on which second semiconductorlayer 30 p is formed. For this reason, width L1 and width L2 aredetermined depending on a width of the etching paste in arrangementdirection x and a gap of the etching paste in arrangement direction x.

After that, annealing is performed at 200° for approximately 4 minutes,and, as shown in FIG. 8, the portion of insulation layer 40 onto whichthe etching paste was applied is removed. Accordingly, firstsemiconductor layer 20 n is exposed. In some processing condition, oneportion of first semiconductor layer 20 n is also removed.

Step S32 is a step of removing exposed first semiconductor layer 20 nand forming trench 13 in rear surface 12 of semiconductor substrate 10n. Alkali cleaning is performed on exposed first semiconductor layer 20n. Accordingly, as shown in FIG. 9, first semiconductor substrate 20 nis removed and trench 13 is formed in rear surface 12 of semiconductorsubstrate 10 n. A depth of trench 13 is properly adjusted depending onthe processing condition. At step S32, insulation layer 40 which is leftresidual without being removed serves as a protection layer to protectfirst semiconductor layer 20 n. Note that trench 13 may be formed byother methods. For example, trench 13 may be formed by cutting.

Step S4 is a step of forming second semiconductor layer 30 p in trench13 formed in rear surface 12 of semiconductor substrate 10 n. On rearsurface 12 of semiconductor substrate 10 n, i-type amorphoussemiconductor layer 32 i is formed. On formed i-type amorphoussemiconductor layer 32 i, p-type amorphous semiconductor layer 35 p isformed. I-type amorphous semiconductor layer 32 i and p-type amorphoussemiconductor layer 35 p are formed by, for example, the CVD method.With this step S4, second semiconductor layer 30 p is formed on rearsurface 12. In other words, second semiconductor layer 30 p is formed onside surface 17 of trench 13 and bottom surface 19 of trench 13 inarrangement direction x. As shown in FIG. 10, in solar cell 1A, secondsemiconductor layer 30 p is formed entirely. Accordingly, secondsemiconductor layer 30 p is formed not only on rear surface 12 but alsoon insulation layer 40. Second semiconductor layer 30 p coves an endportion of insulation layer 40 and an end portion of first semiconductorlayer 20 n. First semiconductor layer 20 n and second semiconductorlayer 30 p are in contact with each other on a boundary between rearsurface 12 in which trench 13 is not formed and trench 13. By performingstep S32 after step S3 so as not to form trench 13, first semiconductorlayer 20 n and second semiconductor layer 30 p are in contact with eachother on rear surface 12 other than the boundary.

Step S5 is a step of forming first electrode 50 n and second electrode50 p. Step S5 includes steps S51 to S54.

Step S51 is a step of removing second semiconductor layer 30 p andinsulation layer 40. An etching paste is applied onto secondsemiconductor layer 30 p formed on insulation layer 40 by using thescreen printing method. After that, annealing is performed atapproximately 70° for 5 minutes or so, and, then, as shown in FIG. 11,the portions of second semiconductor layer 30 p and insulation layer 40onto which the etching paste was applied are removed. If insulationlayer 40 is left without being completely removed, insulation layer 40is cleaned using hydrogen fluoride (HF). With this, first semiconductorlayer 20 n is exposed thereby forming an aperture. Second semiconductorlayer 30 p and insulation layer 40 may be removed separately, notsimultaneously.

Step S52 is a step of forming transparent electrode layer 52. As shownin FIG. 12, transparent electrode layer 52 is formed on firstsemiconductor layer 20 n and second semiconductor layer 30 p by using aphysical vapor deposition method (PVD method). After that, an underlyingmetal layer (not shown) for plating to be an underlying layer ofcollection electrode 55 is formed by the PVD method. For the underlyingmetal layer, for example, Ni and Cu are used.

Step S53 is a step of forming isolation trench 70 for preventing a shortcircuit. Isolation trench 70 is provided in transparent electrode 52formed on second semiconductor layer 30 p formed on insulation layer 40.An etching paste is applied onto the underlying metal layer by using thescreen printing method. Annealing is performed at approximately 200° for4 minutes or so, and, then, as shown in FIG. 13, the portion of theunderlying metal layer onto which the etching paste was applied and thecorresponding portion of transparent electrode 52 are removed.Accordingly, isolation trench 70 is formed. Note that, the patterningusing a photo resist may be performed without using the etching paste inthe step of forming isolation trench 70.

Step S54 is a step of forming collection electrode 55. Collectionelectrode 55 is formed in the underlying metal by using the platingmethod. Accordingly, first electrode 50 n and second electrode 50 p areformed. An end portion of first electrode 50 n is connected toconnection electrode 60 n. An end portion of second electrode 50 p isconnected to connection electrode 60 p. Consequently, solar cell 1Ashown in FIG. 3 is formed.

Note that in a case where collection electrode 55 is formed in theunderlying metal by using the plating method without forming isolationtrench 70 in the underlying metal portion and transparent electrode 52,a step of separating collection electrode 55 into first electrode 50 nand second electrode 50 p. Since collection electrode 55 is thicklyformed by the plating method, this method requires a longer time forseparating collection electrode 55. Also, a material to be cut isincreased, and thus a manufacturing cost is also increased. On the otherhand, in the embodiment, isolation trench 70 is formed in the underlyingmetal and transparent electrode 52 at step S59 before collectionelectrode 55 is formed by using the plating method. Thus, firstelectrode 50 n and second electrode 50 p are isolated from each other byisolation trench 70. With this method, collection electrode 55 can beseparated into first electrode 50 n and second electrode 50 p only byforming isolation trench 70 in the underlying metal thinner thancollection electrode 55. Accordingly, a time required for themanufacturing step can be shortened.

(5) Comparative Evaluation

To ascertain the effects of the invention, a current density isevaluated by a computational model. Specifically, calculation is made ona current density of holes 80 moving to p-type second semiconductorlayer 30 p. Conditions for the computational model are as follows.

P-type second semiconductor layer 30 p is formed on rear surface 12 ofn-type semiconductor substrate 10 n with a thickness of 200 μm. As shownin FIGS. 14A and 14B, it is assumed that an end portion of secondsemiconductor layer 30 p on rear surface 12 in arrangement direction xis set as origin O. In a region up to distance x1 from origin O towardfirst semiconductor layer 20 n adjacent to the end portion of secondsemiconductor layer 30 p, holes 80 generated in semiconductor substrate10 n by receiving light with light-receiving surface 11 are targeted.Distance x1 is 350 μm. It is assumed that a length in longitudinaldirection y of semiconductor substrate 10 n and second semiconductorlayer 30 p is infinite. Holes 80 are evenly generated withinsemiconductor substrate 10 n. Holes 80 move to second semiconductorlayer 30 p via the shortest route. Holes 80 having arrived at secondsemiconductor layer 30 p are collected at once.

FIG. 14A is a cross-sectional view taken along vertical direction zvertical to arrangement direction x and longitudinal direction y andarrangement direction x of a solar cell according to an example in thecomputational model. FIG. 14B is a cross-sectional view taken alongvertical direction z vertical to arrangement direction x andlongitudinal direction y and arrangement direction x of a solar cellaccording to a comparative example in the computational model. As shownin FIG. 14A, in the solar cell according to the example, a trench withdepth h is formed in semiconductor substrate 10 n. The trench is formedto have an arc shape with radius h from a side surface of the trench tothe bottom surface of the trench in arrangement direction x. In example1, depth h is 1 μm. In example 2, depth h is 5 μm. In example 3, depth his 10 μm. In example 4, depth h is 20 μm. As shown in FIG. 14B, a trenchis not formed in the solar cell according to the comparative example.The results of calculating the current densities using these solar cellsare shown in FIG. 15.

FIG. 15 is a graph showing a relationship between a relative currentdensity and a distance from origin O. In FIG. 15, the vertical axis is arelative current density and the horizontal axis is a distance (μm) fromorigin O along direction x2. Direction x2 is a direction along rearsurface 12 in arrangement direction x.

As shown in FIG. 15, in the comparative example, the relative currentdensity is 770 at origin O. In a portion positioned 1 μm away fromorigin O, the relative current density is 0.2. This means that holes 80are concentrated on the end portion of the rear surface of secondsemiconductor layer 30 p.

On the other hand, as compared with the solar cell according to thecomparative example, the current densities in origin O are greatlydecreased in each of the solar cells according to the examples.Specifically, in example 1, the relative current density is 70 at originO. In example 2, the relative current density is 18 at origin O. Inexample 3, the relative current density is 9 at origin O. In example 4,the relative current density is 4 at origin O. Also, it can be seen thatholes 80 move to a more distant position as depth h is deeper.

It can be seen from these results that the current density can befurther decreased as a junction surface between semiconductor substrate10 n and second semiconductor layer 30 p is deeper.

(6) Operation and Effects

In a solar cell according to the embodiment, in solar cell 1A, secondsemiconductor layer 30 p is formed on side surface 17 of trench 13 andbottom surface 19 of trench 13 in arrangement direction x. Accordingly,among carriers formed near first semiconductor layer 20 n insidesemiconductor substrate 10 n, generated are carriers closer to secondsemiconductor layer 30 p formed on side surface 17 and bottom surface 19rather than the end portion of second semiconductor layer 30 p on rearsurface 12. For this reason, the carriers do not move in a concentratedmanner to the end portion of second semiconductor layer 30 n on rearsurface 12 but also move to second semiconductor layer 30 p formed onside surface 17 and bottom surface 19 in a dispersed manner.Accordingly, the current density is considered to be decreased. This caninhibit the time-related deterioration.

Furthermore, second semiconductor layer 30 p is formed on side surface17 of trench 13 and bottom surface 19 of trench 13, so that an area ofthe junction between semiconductor substrate 10 n and secondsemiconductor layer 30 p becomes wider. This can lower the seriesresistance. Thus, the fill factor of the solar cell can be improved.

In solar cell 1 according to the embodiment, side surface 17 is inclinedto be continuous with bottom surface 19. Also, in solar cell 1 accordingto the embodiment, side surface 17 and bottom surface 19 may becontinuous to form an arc shape. With this, among carries generated nearfirst semiconductor layer 20 n, further generated are carriers closer tosecond semiconductor layer 30 p formed on side surface 17 and bottomsurface 19, rather than the end portion of second semiconductor layer 30n on rear surface 12. As a result, the current density can be decreased,which can inhibit the time-related deterioration.

In solar cell 1 according to the embodiment, the junction between secondsemiconductor layer 30 p and side surface 17 and the junction betweensecond semiconductor layer 30 p and bottom surface 19 arehetero-junctions. Different from a solar cell in which a junction isformed by dispersing dopant into a semiconductor substrate, the solarcell with the hetero-junction has a clear junction boundary. For thisreason, the solar cell with the hetero-junction tends to have a largercurrent density. In solar cell 1, a portion in which the hetero-junctionis formed is set to be on side surface 17 and bottom surface 19, so thatthe current density can be decreased.

In solar cell 1 according to the embodiment, semiconductor substrate 10n has a first conductivity type different from second semiconductorlayer 30 p having a second conductivity type. Accordingly, minoritycarriers move to second semiconductor layer 30 p formed in trench 13. Byforming trench 13, minority carriers moving to second semiconductorlayer 30 p via a shorter distance are generated. For this reason, theminority carriers to be re-coupled can be reduced.

In solar cell 1A according to the embodiment, width L2 of secondsemiconductor layer 30 p formed on rear surface 12 in arrangementdirection x is preferably longer than width L1 of first semiconductorlayer 20 n formed on rear surface 12 in arrangement direction x. Thiscan lower the series resistance. Thus, the fill factor of the solar cellcan be made smaller.

In solar cell 1B according to the embodiment, semiconductor substrate 10n has a conductivity type same as that of second semiconductor layer 30n. Also, width L2 of second semiconductor layer 30 p formed on rearsurface 12 in arrangement direction x is shorter than width L1 of firstsemiconductor layer 20 n formed on rear surface 12 in arrangementdirection x. With this, since width L2 is shorter, the moving distanceof the minority carriers generated near bottom surface 19 can beshortened.

In solar cell 1 according to the embodiment, first semiconductor layer20 n and second semiconductor layer 30 p are in contact with each otheron rear surface 12. Also, first semiconductor layer 20 n and secondsemiconductor layer 30 p are in contact with each other on a boundarybetween rear surface 12 in which trench 13 is not formed and trench 13.With this, an area of the junction between the semiconductor substrateand the semiconductor layer can be maximized. Thus, the efficiency ofgenerating electricity can be improved.

In this way, the solar cells of the embodiment decrease a currentdensity and inhibit time-related deterioration in a back junction solarcell.

As described above, the contents of the invention are disclosed throughthe embodiment. However, it should not be understood that thedescription and drawings, which constitute one part of the invention,are to limit the invention. The invention includes various embodimentswhich are not described herein. Accordingly, the invention is onlylimited by the scope of claims and matters specifying the invention,which are appropriate from this disclosure.

What is claimed is:
 1. A solar cell comprising: a semiconductorsubstrate containing a crystalline semiconductor material and having alight-receiving surface and a rear surface; a first amorphoussemiconductor layer having a first conductivity type; a second amorphoussemiconductor layer having a second conductivity type, the firstamorphous semiconductor layer and the second amorphous semiconductorlayer being formed on the rear surface such that the first and secondamorphous semiconductor layers are alternatively arranged in anarrangement direction on the rear surface, and a trench formed in therear surface, wherein the first amorphous semiconductor layer is formedon an area of the rear surface in which the trench is not formed,thereby forming a first hetero-junction between the first amorphoussemiconductor layer and the semiconductor substrate, and wherein a firsttransparent electrode layer and first collection electrode are formed onthe first amorphous semiconductor layer, the second amorphoussemiconductor layer is formed inside of the trench, on a bottom surfaceof the trench and, on a side surface of the trench in the arrangementdirection and wherein a second transparent electrode layer and secondcollection electrode are formed on the second amorphous semiconductorlayer, each of a second junction between the second amorphoussemiconductor layer and the side surface and a third junction betweenthe second amorphous semiconductor layer and the bottom surface is ahetero-junction, and the bottom surface of the trench is closer, in adirection orthogonal to the rear surface of the semiconductor substrate,to the light-receiving surface of the semiconductor substrate than thearea of the rear surface in which the trench is not formed and at whichthe first hetero-junction between the first amorphous semiconductorlayer and the semiconductor substrate is formed, the side surface of thetrench is inclined with respect to and is continuously connected withthe bottom surface of the trench, a boundary of the side surface and thebottom surface forms an arc shape, and the second and thirdhetero-junctions are formed along the arc shape.
 2. The solar cellaccording to claim 1, wherein the semiconductor substrate has the firstconductivity type.
 3. A solar cell comprising: a semiconductor substratecontaining a crystalline semiconductor material and having alight-receiving surface and a rear surface; a first amorphoussemiconductor layer having a first conductivity type; a second amorphoussemiconductor layer having a second conductivity type, the firstamorphous semiconductor layer and the second amorphous semiconductorlayer being formed on the rear surface such that the first and secondamorphous semiconductor layers are alternatively arranged in anarrangement direction on the rear surface, and a trench formed in therear surface, wherein the first amorphous semiconductor layer is formedon an area of the rear surface in which the trench is not formed,thereby forming a first hetero-junction between the first amorphoussemiconductor layer and the semiconductor substrate, and wherein a firsttransparent electrode layer and first collection electrode are formed onthe first amorphous semiconductor layer, the second amorphoussemiconductor layer is formed inside of the trench, on a bottom surfaceof the trench, and on a side surface of the trench in the arrangementdirection and wherein a second transparent electrode layer and secondcollection electrode are formed on the second amorphous semiconductorlayer, each of a second junction between the second amorphoussemiconductor layer and the side surface and a third junction betweenthe second amorphous semiconductor layer and the bottom surface is ahetero-junction, and the bottom surface of the trench is closer, in adirection orthogonal to the rear surface of the semiconductor substrate,to the light-receiving surface of the semiconductor substrate than thearea of the rear surface in which the trench is not formed and at whichthe first hetero-junction between the first amorphous semiconductorlayer and the semiconductor substrate is formed, the side surface of thetrench is inclined with respect to and is continuously connected withthe bottom surface of the trench, and a width of the second amorphoussemiconductor layer formed on the rear surface in the arrangementdirection is longer than a width of the first amorphous semiconductorlayer formed on the rear surface in the arrangement direction.
 4. Thesolar cell according to claim 1, wherein the semiconductor substrate hasthe second conductivity type, and a width of the second amorphoussemiconductor layer formed on the rear surface in the arrangementdirection is shorter than a width of the first amorphous semiconductorlayer formed on the rear surface in the arrangement direction.
 5. Thesolar cell according to claim 1, wherein the first amorphoussemiconductor layer is in contact with the second amorphoussemiconductor layer on the rear surface.
 6. The solar cell according toclaim 1, wherein the first amorphous semiconductor layer is in contactwith the second amorphous semiconductor layer on a boundary between thearea of the rear surface in which the trench is not formed and thetrench.
 7. A solar cell, comprising: a semiconductor substratecontaining a crystalline semiconductor material and having alight-receiving surface and a rear surface; a first amorphoussemiconductor layer formed on the rear surface of the semiconductorsubstrate; an insulation layer formed on the first amorphoussemiconductor layer and formed to include an aperture exposing the firstamorphous semiconductor layer; a second amorphous semiconductor layerarranged alternately in an arrangement direction with the firstamorphous semiconductor layer on the rear surface of the semiconductorsubstrate and formed to cover the insulation layer; an underlyingelectrode formed on the first amorphous semiconductor layer and thesecond amorphous semiconductor layer and formed to include an isolationtrench on the insulation layer, the isolation trench electricallyisolating the first amorphous semiconductor layer and the secondsemiconductor layer from each other; a collection electrode formed onthe underlying electrode; and a trench formed in the rear surface,wherein the first amorphous semiconductor layer is formed on an area ofthe rear surface in which the trench is not formed, thereby forming afirst hetero-junction between the first amorphous semiconductor layerand the semiconductor substrate, the second amorphous semiconductorlayer is formed inside of the trench, on a bottom surface of the trench,and on a side surface of the trench in the arrangement direction, eachof a second junction between the second amorphous semiconductor layerand the side surface and a third junction between the second amorphoussemiconductor layer and the bottom surface is a hetero-junction, and thebottom surface of the trench is closer, in a direction orthogonal to therear surface of the semiconductor substrate, to the light-receivingsurface of the semiconductor substrate than the area of the rear surfacein which the trench is not formed and at which the first hetero-junctionbetween the first amorphous semiconductor layer and the semiconductorsubstrate is formed, the side surface of the trench is inclined withrespect to and is continuously connected with the bottom surface of thetrench, a boundary of the side surface and the bottom surface forms anarc shape, and the second and third hetero-junctions are formed alongthe arc shape.
 8. The solar cell according to claim 7, wherein thesecond amorphous semiconductor layer is exposed at a bottom of theisolation trench.
 9. The solar cell according to claim 8, wherein thefirst amorphous semiconductor layer and the second amorphoussemiconductor layer are in contact with each other on a boundary betweenthe rear surface in which the isolation trench is not formed and thetrench.
 10. The solar cell according to claim 7, wherein the firstamorphous semiconductor layer has a p-type conductivity type and thesecond amorphous semiconductor layer has an n-type conductivity type.11. The solar cell according to claim 1, wherein the first amorphoussemiconductor layer is on the area of the rear surface in which notrench is provided such that the first amorphous semiconductor layer isflat without a convex and concave.
 12. The solar cell according to claim3, wherein the first amorphous semiconductor layer is on the area of therear surface in which no trench is provided such that the firstamorphous semiconductor layer is flat without a convex and concave. 13.The solar cell according to claim 7, wherein the first amorphoussemiconductor layer is on the area of the rear surface in which notrench is provided such that the first amorphous semiconductor layer isflat without a convex and concave.